sot-23 plastic-encapsulate mosfets BSS84 p-channel mosfet description these miniature surface mount mosf ets reduce power loss conserve energy, making this device ideal for use in small power management circuitry. feature z energy efficient z low threshold voltage z high-speed switching z miniature surface mount package saves board space application z dc ? dc converters,load switching, powe r management in portable and battery ? powered products such as computers, printers, cellular and cordless telephones. marking: b84 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -50 v gate-source voltage v gs 20 v continuous drain current i d -0.13 a pulsed drain current (note 1) @tp < 10 s i dm -0.52 a power dissipation p d 225 mw thermal resistance from junction to ambient (note 2) r ja 556 /w junction temperature t j 150 storage temperature t stg -55~+150 maximum lead temperature for soldering purposes , duration for 5 seconds t l 260 so t -23 1. gate 2. source 3. drain 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =-250a -50 v v ds =-50v,v gs = 0v -15 a zero gate voltage drain current i dss v ds =-25v,v gs = 0v -0.1 a gate-body leakage current i gss v gs =20v, v ds = 0v 5 a gate threshold voltage (note 3) v gs(th) v ds =v gs , i d =-250a -0.9 -2 v v gs =-5v, i d =-0.1a 10 ? drain-source on-resistance (note 3) r ds(on) v gs =-10v, i d =-0.1a 8 ? forward transconductance (note 1) g fs v ds =-25v; i d =-100ma 50 ms dynamic characteristics (note 4) input capacitance c iss 30 pf output capacitance c oss 10 pf reverse transfer capacitance c rss v ds =5v,v gs =0v,f =1mhz 5 pf switching characteristics (note 4) turn-on delay time t d(on) 2.5 ns turn-on rise time t r 1 ns turn-off delay time t d(off) 16 ns turn-off fall time t f v dd =-15v, r l =50 ? , i d =-2.5a 8 ns source ? drain diode characteristics continuous current i s -0.13 a pulsed current i sm -0.52 a diode forward voltage (note 3) v ds i s =-0.13a, v gs = 0v -2.2 v notes : 1. repetitive rating : pulse width limited by junction temperature. 2. surface mounted on fr4 board , t 10s. 3. pulse test : pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to producting. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
